Forward gated-diode measurement of filled traps in high-fieldstressed thin oxides |
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| Authors: | Ming-Jer Chen Ting-Kuo Kang Huan-Tsung Huang Chuan-Hsi Liu Chang Y.J. Kuan-Yu Fu |
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| Affiliation: | Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu; |
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| Abstract: | The forward gated-diode monitoring technique can find its potential applications in assessing the filled traps in MOSFET thin oxides, which are subjected to high-field stressing and then followed by a hot-electrons filling scheme. Our measurement of the gate voltage shift associated with the forward current peak produces a power law relation between the filled trap density and the electron stress fluence, indeed in close agreement with that obtained by MOSFET threshold voltage shift |
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