| 氢氧化钾各向异性腐蚀制作近似圆形单晶硅膜的掩膜补偿技术 |
| |
| 引用本文： | 战长青,庞江涛,刘理天,钱佩信. 氢氧化钾各向异性腐蚀制作近似圆形单晶硅膜的掩膜补偿技术[J]. 仪表技术与传感器, 1998, 0(4) |
| |
| 作者姓名： | 战长青 庞江涛 刘理天 钱佩信 |
| |
| 作者单位： | 清华大学微电子学研究所 |
| |
| 摘 要： | 本文介绍我们通过掩膜图形的设计，在（１００）单晶硅上利用氢氧化钾各向异性腐蚀制作错综复杂的正八边形单晶硅膜的方法。据此技术可获得最小外接圆半径仅为腐蚀深度的２．６７倍的小尺寸正八边形单晶硅膜，其力学性能大大优于同样面积的等厚方形单晶硅膜，满足微动力机械的要求。
|
| 关 键 词： | 各向异性腐蚀 单晶硅膜 掩膜 补偿 |
The Compensation Technology for Manufactuuring the Proximal Circular Single Crystal Si Membrane Using Anistropic Etching with Potassium Hydroxide |
| |
| Zhan Changqing,Pan Jiangtao,Liu Litian Microelectronics Institue,Tsinghua Univevsity,Beijing .. The Compensation Technology for Manufactuuring the Proximal Circular Single Crystal Si Membrane Using Anistropic Etching with Potassium Hydroxide[J]. Instrument Technique and Sensor, 1998, 0(4) |
| |
| Authors: | Zhan Changqing Pan Jiangtao Liu Litian Microelectronics Institue Tsinghua Univevsity Beijing . |
| |
| Affiliation: | Zhan Changqing,Pan Jiangtao,Liu Litian Microelectronics Institue,Tsinghua Univevsity,Beijing 100084. |
| |
| Abstract: | This paper introduces the manufacturing method of regular octagone single crystal Si membrane using anistropic etching with potassium hydroxide on the (100)single crystal Si chip through mask layout.By measus of theis thchnology the regular octagone single crystal Si-membrane can be obtained.Its radius of the least circumcircle is only 2 67 time of echted depth and mechanical performance however greatly better than the square single crystal-Si membrane in equal thickness and area.The demands of microdynamic machinery also can be met. |
| |
| Keywords: | Anistopic Etching Sigle Crystal Si-Membrane Mask Compenscition. |
| 本文献已被 CNKI 等数据库收录！ |
