$hboxBaSm_2hboxTi_4hboxO_12$Thin Film for High-Performance Metal–Insulator–Metal Capacitors

A high capacitance density of 4.84$hboxfF/muhboxm^2$and a low leakage current density of 4.28 fA/pF$cdot$V were obtained for a 138-nm-thick crystalline$hboxBaSm_2hboxTi_4hboxO_12$(BST) film. The 100-nm-thick amorphous BST film exhibited a high capacitance density of 3.91$hboxfF/muhboxm^2$and a low leakage current of 1.24 fA/pF$cdot$V. The crystalline BST film had quadratic and linear voltage coefficient of capacitance (VCC) of$-hbox295 hboxppm/V^2$and 684 ppm/V, respectively, and a temperature coefficient of capacitance (TCC) of$-hbox136 hboxppm/^circhboxC$at 100 kHz. The amorphous BST film also showed quadratic and linear VCCs of 48.6$hboxppm/V^2$and$-$738 ppm/V, respectively, with a low TCC of 169$hboxppm/^circhboxC$at 100 kHz.