Blue laser diodes including lattice-matched Al0.83In0.17N bottom cladding layer |
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| Authors: | Castiglia A. Feltin E. Dorsaz J. Cosendey G. Carlin J.-F. Butte R. Grandjean N. |
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| Affiliation: | Inst. of Quantum Electron. & Photonics, Lausanne; |
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| Abstract: | A report is presented on InGaN/GaN multiple quantum well laser diodes, grown by metal organic vapour phase epitaxy on c-plane sapphire substrates, including an Al0.83In0.17N cladding layer lattice- matched to GaN. Lasing action is demonstrated for gain-guided devices at room temperature under pulsed current injection conditions. Direct comparison with structures including only a standard Al0.07Ga0.93N bottom cladding shows an improved optical confinement. This is exemplified by a decreased threshold current density. |
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