| 多孔硅的电致发光和发光二极管 |
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| 引用本文： | 杨国伟. 多孔硅的电致发光和发光二极管[J]. 半导体光电, 1993, 14(3): 250-255 |
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| 作者姓名： | 杨国伟 |
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| 作者单位： | 航空航天部第014中心 洛阳 |
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| 摘 要： | 本文较详细地描述了多孔硅的电致发光(EL),以及发光的量子限制效应的机制,并且讨论了目前已经制备出的几种多孔硅发光二级管:Ps/电解液型,Schot-tky-Like,PN结等二极管。最后,讨论了多孔硅作为半导体光电材料所存在的一些问题。
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| 关 键 词： | 多孔硅 电致发光 发光二极管 |
Electroluminescence and light Emitting Diodes of Porous Silicon |
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| Yang Guowei The No. Center under the Ministry of Astronuatics and Aviation,Luoyang. Electroluminescence and light Emitting Diodes of Porous Silicon[J]. Semiconductor Optoelectronics, 1993, 14(3): 250-255 |
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| Authors: | Yang Guowei The No. Center under the Ministry of Astronuatics Aviation Luoyang |
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| Affiliation: | Yang Guowei The No.014 Center under the Ministry of Astronuatics and Aviation,Luoyang 471009 |
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| Abstract: | Visible electroluminescence(EL)from porous silicon(PS)is reviewed first,follower by descrition of the quantum confinement effect(QCE)mechanism of EL emission.A number of PS based devices such as PS/electrolyte diodes,Schot- tky-like diodes,and PN junction diodes,are demonstrated.Finally,some problems of PS based optoelectronic devices are discussed. |
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| Keywords: | Porous Silicon Electroluminesecence Light Emitting Dioede |
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