Scattering and electron mobility in combination-doped HFET-structures AlGaAs/InGaAs/AlGaAs with high electron density |
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Authors: | R A Khabibullin I S Vasil’evskii G B Galiev E A Klimov D S Ponomarev R A Lunin V A Kulbachinskii |
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Affiliation: | 1.MEPHI National Research Nuclear University,Moscow,Russia;2.Institute of Ultrahigh-Frequency Semiconductor Electronics,Russian Academy of Sciences,Moscow,Russia;3.Moscow State University,Moscow,Russia |
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Abstract: | Molecular-beam epitaxy is used for growing structures differing in doping technique and doping level and having a high two-dimensional-electron
concentration n
s in the quantum well. The effect of doping combining uniform and δ doping on the electron-transport properties of heterostructures
is investigated. A new type of structure with a two-sided silicon δ doping of GaAs transition layers located on the quantum-well
boundaries is proposed. The largest value of electron mobility μH = 1520 cm2/(V s) is obtained simultaneously with a high electron density n
s = 1.37 × 1013 cm−2 at 300 K with such a doping. It is associated with decreasing electron scattering by an ionized impurity, which is confirmed
by the carried out calculations. |
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