Two-dimensional simulation and measurement of high-performanceMOSFETs made on a very thin SOI film

Thinning effects on the device characteristics of silicon-on-insulator (SOI) MOSFETs are discussed. Two-dimensional/two-carrier device simulation revealed the following advantages. An n-channel MOSFET with 500-Å-SOI thickness exhibited a high-punchthrough resistance as well as an improved subthreshold swing down to a deep submicrometer region, even if the film was nearly intrinsic. A capacitance coupling model has been proposed to explain these subthreshold characteristics. The kink elimination effect, which was attributed to a significantly reduced hole density in the SOI film, was reproduced. The low-field channel mobility exhibited a significant increase, which was ascribed to a decrease in the vertical electric field. Moreover, the current-overshoot phenomenon associated with the switching operation was suppressed. Excess holes recombine with electrons quickly after the gate turn-on, bringing about a stabilized potential in the SOI substrate. Experiments were also carried out to verify the simulation