Characteristics of 6H-silicon carbide PIN diodes prototyping by laser doping |
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Authors: | Z. Tian N. R. Quick A. Kar |
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Affiliation: | (1) Laser-Aided Manufacturing, Materials and Micro-Processing Laboratory, College of Optics and Photonics/CREOL, Mechanical, Materials, USA;(2) AppliCote Associates, LLC, 32746 Orlando, FL;(3) Aerospace Engineering Department, University of Central Florida, 32816 Orlando, FL |
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Abstract: | Silicon carbide PIN diodes have been fabricated using a direct-write laser-doping technique that reduces defect generation compared to the conventional ion-implantation technique. Nitrogen and aluminum were successfully incorporated into SiC as n-type and p-type dopants, respectively. Rutherford backscattering studies were conducted to compare the lattice defect generation by the laser-doping and ion-implantation techniques. No amorphization was observed in laser-doped samples, eliminating the need for high-temperature annealing. The current-voltage (I-V) and capacitance-voltage (C-V) characteristics of the PIN diodes were also investigated. The silicon carbide diodes are intended for high-temperature and high-voltage power electronics applications. |
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Keywords: | Silicon carbide laser doping lattice defect PIN diode |
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