Method for online nondestructive hardness assurance for CMOS LSI circuits realized in SOS technology |
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| Authors: | G. G. Davydov A. V. Sogoyan A. Y. Nikiforov A. V. Kirgizova A. G. Petrov A. Y. Sedakov I. B. Yashanin |
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| Affiliation: | (1) Specialized Electronic Systems (SPELS), Moscow, Russia |
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| Abstract: | The radiation performance of digital CMOS circuits realized in SOS technology is investigated in relation to the radiation-induced charge at the silicon-sapphire interface. A nondestructive hardness-assurance method based on radiation annealing is proposed, and reasons are given why this approach should be feasible. The limits of applicability of the method are assessed. |
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