| On-State Breakdown Model for High Voltage RESURF LDMOS |
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| 引用本文： | Fang Jian,Yi Kun,Li Zhaoji,and Zhang Bo(. On-State Breakdown Model for High Voltage RESURF LDMOS[J]. 半导体学报, 2005, 26(3): 436-442 |
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| 作者姓名： | Fang Jian Yi Kun Li Zhaoji and Zhang Bo( |
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| 作者单位： | 电子科技大学微电子与固体电子学院,成都610054 |
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| 摘 要： | An analytical breakdown model under on-state condition for high voltage RESURF LDMOS is proposed.The model considers the drift velocity saturation of carriers and influence of parasitic bipolar transistor.As a result,electric field profile of n-drift in LDMOS at on-state is obtained.Based on this model,the electric SOA of LDMOS can be determined.The analytical results partially fit to our numerical (by MEDICI) and experiment results.This model is an aid to understand the device physics during on-state accurately and it also directs high voltage LDMOS design.
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| 关 键 词： | LDMOS 安全工作区 击穿电压 LDMOS safe operating area breakdown voltage LDMOS RESURF 击穿模型 High Voltage device physics during design experiment MEDICI results numerical Based electric field profile breakdown model drift velocity saturation carriers influence |
On-State Breakdown Model for High Voltage RESURF LDMOS |
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| Fang Jian,Yi Kun,Li Zhaoji,Zhang Bo. On-State Breakdown Model for High Voltage RESURF LDMOS[J]. Chinese Journal of Semiconductors, 2005, 26(3): 436-442 |
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| Authors: | Fang Jian Yi Kun Li Zhaoji Zhang Bo |
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| Abstract: | An analytical breakdown model under on-state condition for high voltage RESURF LDMOS is proposed.The model considers the drift velocity saturation of carriers and influence of parasitic bipolar transistor.As a result,electric field profile of n-drift in LDMOS at on-state is obtained.Based on this model,the electric SOA of LDMOS can be determined.The analytical results partially fit to our numerical (by MEDICI) and experiment results.This model is an aid to understand the device physics during on-state accurately and it also directs high voltage LDMOS design. |
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| Keywords: | LDMOS safe operating area breakdown voltage |
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