| CMOS低噪声放大器电路结构分析与设计 |
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| 引用本文： | 臧威,李绪诚,刘桥. CMOS低噪声放大器电路结构分析与设计[J]. 重庆理工大学学报(自然科学版), 2008, 22(4): 131-135 |
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| 作者姓名： | 臧威 李绪诚 刘桥 |
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| 作者单位： | 贵州大学计算机科学与技术学院 贵阳550025(臧威，刘桥)，贵州大学电子科学与信息技术学院 贵阳550025(李绪诚) |
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| 摘 要： | 介绍了CMOS低噪声放大器的几种结构,研究了该放大器的噪声性能和相关制约因素,分析了电感反馈共源共栅结构,并在此基础上,讨论了在低功耗技术中采用的电流偏置复用结构,最后展望了CMOS低噪声放大器的发展趋势.
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| 关 键 词： | 低噪声放大器 噪声系数 电感负反馈共源共栅结构 |
Analysis and Design of CMOS Low Noise Amplifier |
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| ZANG Wei,LI Xu-chen,LIU Qiao. Analysis and Design of CMOS Low Noise Amplifier[J]. Journal of Chongqing University of Technology(Natural Science), 2008, 22(4): 131-135 |
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| Authors: | ZANG Wei LI Xu-chen LIU Qiao |
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| Abstract: | Several kinds of circuit architecture of radio frequency low noise amplifier are introduced in the paper,the noise performance and correlation restrict factors of this amplifier is analyzed;inductive-degenerate cascade architecture is analyzed emphatically.Based on the analyses above,a bias current reuse structure to reduce power dissipation is presented.Finally,the future trend of the development of CMOS low noise amplifiers is predicted. |
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| Keywords: | low noise amplifier noise figure inductive-degenerate cascade architecture |
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