Analysis on the difference of the characteristic between high power IGBT modules and press pack IGBTs |
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Affiliation: | 1. State Key Laboratory of Alternate Electrical Power System with Renewable Energy Sources (North China Electric Power University), Changping District, Beijing 102206, China;2. State Key Laboratory of HVDC (Electric Power Research Institute, China Southern Power Grid), Huangpu District, Guangzhou 510080, China;1. Power Electronics Laboratory, K. N. Toosi University of Technology, Tehran, Iran;2. Center of Reliable Power Electronics (CORPE), Aalborg University, Aalborg, Denmark;1. Hyosung Corporation, Power & Industrial Systems R&D Center, Anyang, Republic of Korea;2. Graduate School of Mechanical and Information Engineering, University of Seoul, Seoul, Republic of Korea;3. Department of Mechanical and Information Engineering, University of Seoul, Seoul, Republic of Korea |
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Abstract: | The insulated gate bipolar transistor (IGBT) has been widely employed in such applications as alternate current motors and inverters for its lower driving power and lower on-state voltage. IGBT modules and press pack IGBTs are the most commonly used packaging for high-voltage and high-power-density applications. The difference in the packaging style and working conditions between IGBT modules and press pack IGBTs creates distinctions in, for instance, the thermal characteristics and reliability. Those distinctions lead to different applications and working conditions. In this paper, the development of IGBT devices has been reviewed, including the distinction of IGBT modules and press pack IGBTs in packaging style. Most importantly, the thermal and reliability characteristics have been compared in detail and the applications that are most suitable for IGBT modules and press pack IGBTs were outlined. The comparison of the thermal characteristics, reliability and applications provides guidance for users to take full advantage of the devices according to their requirements. |
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