Reliability of amorphous InGaZnO TFTs with ITO local conducting buried layer for BEOL power transistors |
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| Affiliation: | 1. Dept. of Electronics Eng., Incheon National Univ., Incheon 406-772, Republic of Korea;2. Dept. of Electronic Materials Eng., Kwangwoon Univ., Seoul 139-701, Republic of Korea;1. Fraunhofer Institut für Zuverlässigkeit und Mikrointergation, 13355 Berlin, Germany;2. Forschungsschwerpunkt Technologien der Mikroperipherik, Technische Universität Berlin, 13355 Berlin, Germany;1. STMicroelectronics, Technology and Design Platform, 38926 Crolles, France;2. EER, IM2NP-ISEN, UMR-CNRS, 7334 maison des technologies, 83000, France;1. Engineering Product Development Pillar, Singapore University of Technology and Design, 487372, Singapore;2. State Key Laboratory of Modern Optical Instrumentation, College of Optical Science and Engineering, Zhejiang University, Hangzhou 310027, China;1. Deggendorf Institute of Technology, Dieter-Görlitz-Platz 1, 94469 Deggendorf, Germany;2. Universitat Autònoma de Barcelona (UAB), 08193 Bellaterra, Barcelona, Spain |
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| Abstract: | The device reliability of a-IGZOTFTs with ITO local conducting buried layer (LCBL) has been investigated under positive gate bias stress and hot carrier stress for the application as BEOL power transistors. The drive current of a-IGZO TFTs could be controlled by the modulation of ITO LCBL thickness and distance under source/drain electrode. The threshold voltage shifts, the drain current degradation, and breakdown voltage have been measured and discussed according to the different ITO LCBL thickness and distance. The devices with thick ITO and short ITO distance are desirable for a power device for High/Low type I/O bridges. The devices with thin ITO and long ITO distance are desirable for Low/High type I/O bridges. The breakdown voltages are decreased with the increase of ITO thickness. |
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