ESD protection structure with reduced capacitance and overshoot voltage for high speed interface applications |
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| Affiliation: | 1. University of Central Florida, Orlando, FL, United States;2. Analog Devices, Inc., Wilmington, MA, United States;1. CEA-LITEN, Grenoble, France;2. CEA-LETI, Grenoble, France;1. Province-Ministry Joint Key Laboratory of Electromagnetic Field and Electrical Apparatus Reliability, Hebei University of Technology, Tianjin 300130, China;2. Institute of Project Management, Department of Leisure Industry Management, National Chin-Yi University of Technology, Taichung 41170, Taiwan;3. Department of Logistics Management, National Defense University, Taipei, 112, Taiwan;1. Department of Electrical Engineering, Centro Universitário FEI, Av. Humberto de Alencar Castelo Branco, 3972, CEP 09850-901 São Bernardo do Campo, Brazil;2. Département des Composants Silicium – SCME/LCTE, CEA-LETI Minatec, 17 Rue des Martyrs, 38054 Grenoble, France |
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| Abstract: | Dual diodes with embedded silicon controlled rectifier (DD-SCR) for high-speed applications are presented. A new DD-SCR topography is shown to exhibit a high failure current (It2), small on-state resistance (RON), low voltage overshoot and low parasitic capacitance. This is a preferred device option for broadband high-speed data converter applications in advanced 28 nm CMOS processes. A comprehensive device characterization demonstrates the design tradeoffs and the superior ESD performance in relation to the devices' variations capacitance in the sub 40 fF range. |
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