Thermal evaluation of GaN-based HEMTs with various layer sizes and structural parameters using finite-element thermal simulation |
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| Affiliation: | 1. Institute of Semiconductor Device Reliability Physics, Beijing University of Technology, Beijing 100124, China;2. China Electronics Standardization Institute, Beijing 100176, China.;1. Robert Bosch GmbH, Reliability Modeling and System Optimization (AE/EDT3), Reutlingen 72703, Germany;2. Mechanical Engineering Department, University of Maryland College Park, MD 20742, USA;3. Fraunhofer-Institut für Betriebsfestigkeit und Systemzuverlässigkeit LBF, Darmstadt 64289, Germany;1. Department of Electrical Engineering, National Sun Yat-Sen University, Kaohsiung 804, Taiwan;2. Department of Electrical Engineering, National Cheng Kung University, Tainan 701, Taiwan;1. Department of Electrical Engineering, National Chi Nan University, Nantou 54561, Taiwan;2. Institute of Electronics Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan |
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| Abstract: | By using scanning electron microscopy (SEM) and infrared data, we established and verified a two-dimensional finite-element model conforming to the size of the practical device to study high-electron-mobility transistors (HEMTs). Because the resolution of the infrared measurement was 7 μm, we verified the correctness of the model by comparing the 7-μm average peak temperature with the measured infrared data at various platform temperatures. The simulated average peak temperature agrees well with the infrared data. To further investigate the thermal performance of GaN-based HEMTs with various layer sizes and structural parameters, we simulated devices with various values of gate length, gate spacing, GaN layer thickness, substrate breadth, and substrate thickness. The conclusions presented result from some factors that must be taken into account to manage thermal issues in devices. |
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