Design of 2.4-GHz T/R switch with embedded ESD protection devices in CMOS process |
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| Affiliation: | 1. Department of Electrical Engineering, National Taiwan Normal University, Taiwan;2. Institute of Electronics, National Chiao Tung University, Taiwan;1. Department of Manufacturing and Materials Engineering, University of Campinas, UNICAMP, 13083-860 Campinas, SP, Brazil;2. Federal Institute of Education, Science and Technology of Pará, IFPA, 66093-020 Belém, PA, Brazil;1. Department of Electrophysics, National Chiao Tung University, Hsinchu 300, Taiwan, ROC;2. Department of Mechanical Engineering, National Chiao Tung University, Hsinchu 300, Taiwan, ROC;3. Department of Mechanical Engineering, National Chung Cheng University, Chia-Yi 621, Taiwan, ROC;4. Research Group of Biomedical Image Processing, Shing-Tung Yau Center, National Chiao Tung University, Hsinchu 300, Taiwan, ROC;5. Department of Electronics Engineering, National Chiao Tung University, Hsinchu 300, Taiwan, ROC;6. Material and Design Engineering Division Engineering Center, Siliconware Precision Industries Co., Ltd., Taichung 400, Taiwan, ROC;7. Department of Mechatronic Engineering, National Taiwan Normal University, Taipei City 106, Taiwan, ROC;1. State Key Lab of Electronic Thin Films & Integrated Devices, University of Electronic Science & Technology of China, Chengdu, China;2. Institute of Biomedical Engineering, Chinese Academy of Medical Science and Peking Union Medical College, 300192 Tianjin, China;3. Design center, Avic Beijing Keeven Aviation Instrument CO., LTD, China Aviation Industry Corporation, Beijing, China;1. Department of Materials Engineering, Isfahan University of Technology, Isfahan 84156-83111, Iran;2. Delft University of Technology, EEMCS Faculty, Delft, The Netherlands;1. Federal University of Minas Gerais, Belo Horizonte, Brazil;2. Univ. Grenoble Alpes, CNRS, TIMA, Grenoble, France;1. Shenzhen Key Laboratory of Electromagnetic Control, Shenzhen University, Shenzhen 518060, China;2. Guangdong Key Laboratory of Optomechatronics Integration, Research Institute of Tsinghua University in Shenzhen, Shenzhen 518057, China |
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| Abstract: | As CMOS processes advanced, the integration of radio-frequency (RF) integrated circuits was increasing. In order to protect the fully-integrated RF transceiver from electrostatic discharge (ESD) damage, the transmit/receive (T/R) switch of transceiver frond-end should be carefully designed to bypass the ESD current. This work presented a technique of embedded ESD protection device to enhance the ESD capability of T/R switch. The embedded ESD protection devices of diodes and silicon-controlled rectifier (SCR) are generated between the transistors in T/R switch without using additional ESD protection device. The design procedure of RF circuits without ESD protection device can be simplified. The test circuits of 2.4-GHz transceiver frond-end with T/R switch, PA, and LNA have been integrated and implemented in nanoscale CMOS process to test their performances during RF operations and ESD stresses. The test results confirm that the embedded ESD protection devices can provide sufficient ESD protection capability and it is free from degrading circuit performances. |
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