Comparison of the electro-thermal constraints on SiC MOSFET and Si IGBT power modules in photovoltaic DC/AC inverters |
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| Affiliation: | 1. French Alternative Energies and Atomic Energy Commission-National Solar Energy Institute (CEA-INES), France;2. Univ. Grenoble Alpes, G-INP, CNRS, G2Elab, F-38000 Grenoble, France;1. Department of Manufacturing and Materials Engineering, University of Campinas, UNICAMP, 13083-860 Campinas, SP, Brazil;2. Federal Institute of Education, Science and Technology of Pará, IFPA, 66093-020 Belém, PA, Brazil;1. Department of Materials Engineering, Isfahan University of Technology, Isfahan 84156-83111, Iran;2. Delft University of Technology, EEMCS Faculty, Delft, The Netherlands;1. Department of Electrical Engineering, National Taiwan Normal University, Taiwan;2. Institute of Electronics, National Chiao Tung University, Taiwan;1. State Key Lab of Electronic Thin Films & Integrated Devices, University of Electronic Science & Technology of China, Chengdu, China;2. Institute of Biomedical Engineering, Chinese Academy of Medical Science and Peking Union Medical College, 300192 Tianjin, China;3. Design center, Avic Beijing Keeven Aviation Instrument CO., LTD, China Aviation Industry Corporation, Beijing, China |
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| Abstract: | This article presents a comparative study between SiC MOSFETs and Si IGBTs regarding changes in their junction temperature in a PV inverter application. The estimation of these variations is made by introducing the current mission profiles extracted from a photovoltaic plant over one year into a calculation tool. The latter is based on a losses model and a thermal model including a coupling between them. The calculation of the losses in SiC MOSFETs in the 3rd quadrant is detailed. The results are the mission profiles of the junction temperature of semiconductors, which allow for determining and comparing the thermal constraints in SiC MOSFET and Si IGBT power modules. |
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