Direct observation of changes in the effective minority-carrier lifetime of SiNx-passivated n-type crystalline-silicon substrates caused by potential-induced degradation and recovery tests |
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| Affiliation: | 1. Department of Electrophysics, National Chiao Tung University, Hsinchu 300, Taiwan, ROC;2. Material and Design Engineering Division Engineering Center, SPIL, Taichung 400, Taiwan, ROC;1. Province-Ministry Joint Key Laboratory of Electromagnetic Field and Electrical Apparatus Reliability, Hebei University of Technology, Tianjin 300130, China;2. Institute of Project Management, Department of Leisure Industry Management, National Chin-Yi University of Technology, Taichung 41170, Taiwan;3. Department of Logistics Management, National Defense University, Taipei, 112, Taiwan;1. Department of Electrical Engineering, Centro Universitário FEI, Av. Humberto de Alencar Castelo Branco, 3972, CEP 09850-901 São Bernardo do Campo, Brazil;2. Département des Composants Silicium – SCME/LCTE, CEA-LETI Minatec, 17 Rue des Martyrs, 38054 Grenoble, France |
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| Abstract: | We directly observed reductions in the effective minority-carrier lifetime (τeff) of n-type crystalline silicon (c-Si) substrates with silicon-nitride passivation films caused by potential-induced degradation (PID). We prepared PID-test samples by encapsulating the passivated substrates with standard photovoltaic-module encapsulation materials. After PID tests applying − 1000 V to the c-Si samples from the glass surface, the τeff was decreased, which probably pertains to Na introduced into the c-Si. After PID tests applying + 1000 V, the sample, on the other hand, showed a considerably rapid τeff reduction, probably associated with the surface polarization effect. We also performed recovery tests of predegraded samples, by applying a bias opposite to that used in a degradation test. The τeff of a sample predegraded by applying + 1000 V was rapidly completely recovered by applying − 1000 V, while those of predegraded by applying − 1000 V show only slight and insufficient τeff recovery. |
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