Single event effects sensitivity of low energy proton in Xilinx Zynq-7010 system-on chip |
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| Affiliation: | 1. School of Nuclear Science and Technology, Xi''an Jiaotong University, Xi''an City 710049, China;2. Peking University, Beijing 100000,China;3. School of Software Engineering, Xi''an Jiaotong University, Xi''an City 710049, China;1. University of Paris, LTIE-GTE EA 4415, 50, rue de Sèvres, F-92410 Ville d''Avray, France;2. Polytechnic Institute of Coimbra, ISEC, DEM, Rua Pedro Nunes, Quinta da Nora, 3030-199 Coimbra, Portugal;3. University of the Basque Country, ENEDI Research Group, Plaza Europa 1, E-20018 San Sebastián, Spain;4. University of Bath, Department of Architecture and Civil Engineering, Claverton Down, Bath BA2 7AY, UK;1. Erich Schmid Institute of Materials Science, Austrian Academy of Sciences, Jahnstrasse 12, Leoben, Austria;2. Vienna University of Technology, Institute of Chemical Technologies and Analytics, Vienna, Austria;3. Christian Doppler Laboratory for Lifetime and Reliability of Interfaces in Complex Multi-Material Electronics, CTA, TU Wien, Vienna, Austria;4. Infineon Technologies Austria AG, Villach, Austria;5. Infineon Technologies Germany AG, Regensburg, Germany;6. Kompetenzzentrum Automobil- und Industrie-Elektronik GmbH, Villach, Austria;1. STMicroelectronics, Crolles, France;2. CEA-LETI, Grenoble, France;3. IMEP-LAHC, Université Grenoble Alpes, Grenoble, France;1. School of Engineering, RMIT University, GPO Box 2476V, Melbourne, VIC 3001, Australia;2. School of Science, RMIT University, GPO Box 2476V, Melbourne, VIC 3001, Australia |
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| Abstract: | In this paper, experimental methods are emphatically described for measuring the proton single event effects (SEE) in Xilinx Zynq-7010 system-on chip. Experimental data are presented showing that low energy (3 MeV ≤ Energy ≤ 10 MeV) proton irradiation can cause single event effects in different hardware blocks of Xilinx Zynq-7010 SoC, including D-Cache, programmable logic (PL), arithmetic logical unit (ALU), float point unit (FPU) and direct memory access (DMA). Moreover, the sensitivities of different hardware blocks to single event effects are different. Finally, the Stopping and Range of Ions in Matter (SRIM) software calculations show the possible reasons for this difference. |
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