The role of electronic energy loss in SHI irradiated Ni/oxide/n-GaP Schottky diode |
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| Affiliation: | 1. Department of Applied Physics, Indian Institute of Technology (ISM) Dhanbad, 826004, India;2. Inter University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110067, India;1. ARIES Research Center, Universidad Antonio de Nebrija, C. Pirineos 55, Madrid, Spain;2. CNIT- National Inter-University Consortium for Telecommunications, University of Rome “Tor Vergata” Via del Politecnico 1, 00133, Rome, Italy;1. M/A-COM Technology Solutions, Lowell, MA, USA;2. University of Parma, Parma, Italy;1. Graduate School of NID Fusion Technology, Seoul National University of Science and Technology, Republic of Korea;2. Dept. of Mechanical and Automotive Engineering, Seoul National University of Science and Technology, Seoul, 139-743, Republic of Korea |
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| Abstract: | The impact of energy loss mechanism by 100 MeV Au8 + ion on the dielectric parameters of Ni/oxide/n-GaP Schottky diode was studied under different fluences. The Schottky barrier height, donor ion concentration and interface states density of the diode were varied considerably under different ion fluence. The various dielectric parameters were altered significantly by the ion fluence. The reduction in dielectric constant after irradiation was ascribed to screening of space charge polarization due to reduction in interface states density. The relaxation peak of imaginary electric modulus indicates hopping type conduction mechanisms in the intermediate voltage range. The sensitive behavior of dielectric parameters with fluence dose was attributed to the alteration of interface state density due to high electronic energy loss of 100 MeV Au8 + ions at the interface. |
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