Random telegraph noise in SiGe HBTs: Reliability analysis close to SOA limit |
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| Affiliation: | 1. IMS Laboratory, University of Bordeaux, UMR CNRS 5218, Cours de la Libération, 33405 Talence, France;2. Indian Institute of Technology, Madras, India;3. Infineon Technologies, AG, Neubiberg, Germany;1. Institute of Electronics, Technical University of Łódź, ul. Wolczańska 211-215, 90-924 Łódź, Poland;2. Department of Electronics and Information Systems, Ghent University, Sint Pietersnieuwstraat 41, 9000 Ghent, Belgium;3. Department of Electrical and Computer Engineers, Aristotle University of Thessaloniki, 54124 Thessaloniki, Greece;1. Department of Electronics Technology, Budapest University of Technology and Economics, Budapest, Hungary;2. Czech Technical University in Prague, Faculty of Electrical Engineering, Department of Electrotechnology, Technická 2, Prague 6 166 27, Czech Republic |
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| Abstract: | In this paper, we present extensive random telegraph signal (RTS) noise characterization in SiGe heterojunction bipolar transistors. RTS noise, observed at the base, originates at the emitter periphery while at the collector side distinct RTS noise is observed at high-injection that originates from the traps in the shallow trench regions. Time constants extracted from RTS during aging tests allow understanding of trap dynamics and new defect formation within the device structure. This paper provides the first demonstration of RTS measurements during accelerated aging tests to study and understand generation of defects under bias stress in SiGe HBTs operating at the limit of their safe-operating area. |
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