Modelling of the shoot-through phenomenon introduced by the next generation IGBT in inverter applications |
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| Affiliation: | 1. Department of Life Science and System Engineering, Kyushu Institute of Technology, Kitakyushu, Japan;2. Green Electronics Research Institute, Kitakyushu, Japan;3. Department of Electrical and Electronic Engineering, Tokyo Metropolitan University, Tokyo, Japan;1. Fraunhofer Institut für Zuverlässigkeit und Mikrointergation, 13355 Berlin, Germany;2. Forschungsschwerpunkt Technologien der Mikroperipherik, Technische Universität Berlin, 13355 Berlin, Germany;1. Engineering Product Development Pillar, Singapore University of Technology and Design, 487372, Singapore;2. State Key Laboratory of Modern Optical Instrumentation, College of Optical Science and Engineering, Zhejiang University, Hangzhou 310027, China;1. Deggendorf Institute of Technology, Dieter-Görlitz-Platz 1, 94469 Deggendorf, Germany;2. Universitat Autònoma de Barcelona (UAB), 08193 Bellaterra, Barcelona, Spain;1. STMicroelectronics, Technology and Design Platform, 38926 Crolles, France;2. EER, IM2NP-ISEN, UMR-CNRS, 7334 maison des technologies, 83000, France |
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| Abstract: | The shoot-through phenomenon has not been fully discussed for high-power inverters with IGBTs. This is because a negative gate voltage is applied to IGBTs during off states. Recently, attention is paid to an improved gate driver with only a positive gate voltage in order to meet demands for simplification, integration, and reduction in power consumption as well as in cost of the gate driver. Moreover, the threshold voltage of the next-generation IGBT will decrease with microfabrication techniques of the gate structure. This will make the shoot-through phenomenon severer and degrade the inverter reliability with the next-generation IGBTs. The influence of the parasitic parameters in both the IGBT and circuit on the shoot-through mechanism has not been investigated so far.This paper clarifies the shoot-through mechanism and investigates the impact of the next generation IGBTs on the inverter reliability. The influence of the internal capacitance of IGBT including stray inductance on inverter reliability is experimentally confirmed. |
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