Capacitive effects in IGBTs limiting their reliability under short circuit |
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| Affiliation: | 1. Centre of Reliable Power Electronics (CORPE), Department of Energy Technology, Aalborg University, Pontoppidanstraede 111, 9220 Aalborg, Denmark;2. ABB Switzerland Ltd. Semiconductors, CH-5600 Lenzburg, Switzerland;1. Fraunhofer Institut für Zuverlässigkeit und Mikrointergation, 13355 Berlin, Germany;2. Forschungsschwerpunkt Technologien der Mikroperipherik, Technische Universität Berlin, 13355 Berlin, Germany;1. Deggendorf Institute of Technology, Dieter-Görlitz-Platz 1, 94469 Deggendorf, Germany;2. Universitat Autònoma de Barcelona (UAB), 08193 Bellaterra, Barcelona, Spain;1. Engineering Product Development Pillar, Singapore University of Technology and Design, 487372, Singapore;2. State Key Laboratory of Modern Optical Instrumentation, College of Optical Science and Engineering, Zhejiang University, Hangzhou 310027, China;1. STMicroelectronics, Technology and Design Platform, 38926 Crolles, France;2. EER, IM2NP-ISEN, UMR-CNRS, 7334 maison des technologies, 83000, France;1. Semiconductor Devices, Berlin University of Technology (TUB), Sekr. E4, Einsteinufer 19, 10587 Berlin, Germany;2. Hamamatsu Photonics KK, 325-6, Sunayama-cho, Naka-ku, Hamamatsu, Shizuoka Pref. 430-8587, Japan |
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| Abstract: | The short-circuit oscillation mechanism in IGBTs is investigated in this paper by the aid of semiconductor device simulation tools. A 3.3-kV IGBT cell has been used for the simulations demonstrating that a single IGBT cell is able to oscillate together with the external circuit parasitic elements. The work presented here through both circuit and device analysis, confirms that the oscillations can be understood with focus on the device capacitive effects coming from the interaction between carrier concentration and the electric field. The paper also shows the 2-D effects during one oscillation cycle, revealing that the gate capacitance changes according with the shape of the electric field due to the charge distribution in the n-base. It has been identified that the time-varying capacitance leads to parametric oscillations together with the stray gate inductance, which limit the reliability of the IGBT. |
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