Ultrahigh Energy Density of Antiferroelectric PbZrO3-Based Films at Low Electric Field |
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Authors: | Dongxu Li Xiangyu Meng Enhao Zhou Xiaoxiao Chen Zhonghui Shen Qinghu Guo Zhonghua Yao Minghe Cao Jinsong Wu Shujun Zhang Hanxing Liu Hua Hao |
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Affiliation: | 1. State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, School of Material Science and Engineering, International School of Material Science and Engineering, Wuhan University of Technology, Wuhan, 430070 P. R. China;2. Foshan Xianhu Laboratory of the Advanced Energy Science and Technology Guangdong Laboratory, Xianhu hydrogen Valley, Foshan, 528200 P. R. China;3. Institute for Superconducting and Electronic Materials, Australian Institute of Innovative Materials, University of Wollongong, Wollongong, NSW, 2500 Australia |
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Abstract: | Dielectric capacitors play a vital role in advanced electronics and power systems as a medium of energy storage and conversion. Achieving ultrahigh energy density at low electric field/voltage, however, remains a challenge for insulating dielectric materials. Taking advantage of the phase transition in antiferroelectric (AFE) film PbZrO3 (PZO), a small amount of isovalent (Sr2+) / aliovalent (La3+) dopants are introduced to form a hierarchical domain structure to increase the polarization and enhance the backward switching field EA simultaneously, while maintaining a stable forward switching field EF. An ultrahigh energy density of 50 J cm?3 is achieved for the nominal Pb0.925La0.05ZrO3 (PLZ5) films at low electric fields of 1 MV cm?1, exceeding the current dielectric energy storage films at similar electric field. This study opens a new avenue to enhance energy density of AFE materials at low field/voltage based on a gradient-relaxor AFE strategy, which has significant implications for the development of new dielectric materials that can operate at low field/voltage while still delivering high energy density. |
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Keywords: | antiferroelectric energy storage films low electric field PbZrO3 |
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