Electronic conduction in thin amorphous MoO3/SiO films deposited by co-evaporation

A study of the effects of changes in composition and temperature on the electrical properties of MoO₃/SiO thin amorphous films is presented. The high-field conduction is probably due to the Poole-Frenkel effect as it is in simple SiO. At low temperature and low field the electron hopping process is dominant but conduction at higher temperatures is a contact-limited process. The decrease in conductivity with increasing concentration of SiO in MoO₃ may be attributed to the increasing number of trapping centres introduced in MoO₃/SiO films during the evaporation process. The increase in conductivity in MoO₃/SiO films with increasing temperature is attributed to the increasing concentration and higher mobility of charge carriers.