VLWIR HgCdTe detector current-voltage analysis |
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Authors: | Angelo Scotty Gilmore James Bangs Amanda Gerrish |
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Affiliation: | (1) Raytheon Vision Systems, 93117 Goleta, CA |
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Abstract: | This article details current-voltage characteristics for a very long wavelength infrared (VLWIR) Hg1−x
CdxTe detector from Raytheon Vision Systems with a cutoff wavelength of 20.0 μm at 28 K. In this article, the VLWIR detector
diode currents are modeled as a function of bias and temperature. This in-depth current model includes diffusion, band-to-band
tunneling, trap-assisted tunneling (TAT), and shunt currents. The trap density has been extracted from the modeled TAT component
of the current and was revealed to be relatively temperature-independent. An attempted incorporation of VLWIR detector susceptibility
to stress has also been included through variation of the model parameter associated with the p-n junction electric field
strength. This field variation accounts for stress induced piezoelectric fields. The current in this VLWIR detector was found
to be diffusion-limited under much of the temperature and bias ranges analyzed. This modeling allows the scrutiny of both
the dominant current-limiting mechanism and the magnitudes of the various current components as a function of both bias and
temperature, allowing the straightforward determination of the ideal operating conditions for a given detector. |
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Keywords: | HgCdTe IV modeling trap-assisted tunneling very long wavelength infrared (VLWIR) |
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