基片预处理对CVD金刚石薄膜形核的影响

微波辅助等离子体化学气相沉积法是目前低压气相合成金刚石薄膜方法中应用最普遍、工艺最成熟的方法，形核是CVD金刚石沉积的第一步．利用微波辅助等离子体化学气相沉积装置，研究了硅基片预处理方式对金刚石薄膜形核密度的影响．在工作气压为5-8kPa，微波功率为2500—5000W，甲烷流量为4-8cm^3／min，氢气流量为200em3／min，沉积温度为500℃-850℃的条件下，在单晶Si基片上沉积金刚石薄膜．通过扫描电子显微镜形貌观察表明，基片预处理能够显著提高金刚石形核密度，同时用拉曼光谱表征了金刚石薄膜的质量，

The effect of substrate surface pre-polishing on nucleation diamond thin films by MPECVD

Microwave enhanced plasma chemical vapor deposition is the most common and mature method which deposited the low-pressure vapor deposited diamond films, in this process, nucleation is the first step. The effect of substrate surface pre-polishing on nucleation of diamond by MPECVD has been studied. We deposited the diamond film when the deposition pressure is 5~8~103 Pa, microwave power is 2 500-5 000 W, the methane flow is 4-8 cm^3/min, H2 flow is 200 cm3/min, substrate temperature is 500-850 ℃. We discovered that the pre-polishing of substrate surface can make diamond nucleation increase by Scanning electronic microscope（SEM）,meanwhile observed the quality of diamond films by Raman spectrum.