| TiO2和SiO2薄膜应力在线测量与研究 |
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| 引用本文： | 冷健,薛维,喻志农,卢维强,王华清,张东璞. TiO2和SiO2薄膜应力在线测量与研究[J]. 真空科学与技术学报, 2011, 31(4): 465-469. DOI: 10.3969/j.issn.1672-7126.2011.04.16 |
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| 作者姓名： | 冷健 薛维 喻志农 卢维强 王华清 张东璞 |
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| 作者单位： | 1. 北京理工大学光电学院 北京100081
2. 中国大恒有限公司 北京100080 |
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| 摘 要： | 研究了离子能量在薄膜制备过程中对TiO2和SiO2薄膜应力的影响。用电子束蒸发的方法制备TiO2和SiO2薄膜,使用实验室自行设计制作的基于哈特曼传感器的薄膜应力仪在线监测TiO2和SiO2薄膜应力随膜厚的变化。结果表明,离子辅助沉积的TiO2薄膜张应力值要比传统工艺低40 MPa,并且随着离子能量的增加,薄膜逐渐由张应力变为压应力,薄膜的最大折射率为2.56;而离子辅助的溅射效应在制备SiO2薄膜时比较明显,传统工艺制备的SiO2薄膜表现为压应力,而用离子辅助的方法制备的SiO2薄膜表现为张应力,并且随着离子能量的增加,薄膜变得疏松,折射率逐渐降低。
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| 关 键 词： | TiO2 SiO2 离子辅助 薄膜应力 哈特曼传感器 |
Growth and On-Line Stress Evaluation of TiO_2 and SiO_2 Films |
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| Leng Jian,Xue Wei,Yu Zhinong,Lu Weiqiang,Wang Huaqing,Zhang Dongpu. Growth and On-Line Stress Evaluation of TiO_2 and SiO_2 Films[J]. JOurnal of Vacuum Science and Technology, 2011, 31(4): 465-469. DOI: 10.3969/j.issn.1672-7126.2011.04.16 |
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| Authors: | Leng Jian Xue Wei Yu Zhinong Lu Weiqiang Wang Huaqing Zhang Dongpu |
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| Affiliation: | Leng Jian1,Xue Wei1,Yu Zhinong1,Lu Weiqiang1,Wang Huaqing2,Zhang Dongpu1(1.School of Optoelectronics,Beijing Institute of Technology,Beijing 100081,China,2.China Daheng Group,Inc.,Beijing 100080,China) |
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| Abstract: | Here we addressed the on-line stress evaluation of the TiO2 and SiO2 films,grown by ion beam assisted deposition(IBAD) and electron beam evaporation on glass substrates,respectively.The impacts of ion energy and film thickness on variations in the stress distribution during the film growth were characterized online with a lab-built stress measurement setup,based on Hartmann sensor.The results show that the ion sputtering significantly affects the stress and distributions of both the TiO2 and SiO2 films.For ... |
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| Keywords: | TiO2 SiO2 Ion beam assisted Film stress Hartmann sensor |
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