Radiation Effects on GaAs Charge Coupled Devices with High Resistivity Gate Structures |
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Authors: | Bellem Raymond D Jenkins William C |
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Affiliation: | Air Force Wright Aeronautical Laboratories Wright Patterson AFB, OH 45344; |
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Abstract: | The results of a study on the effects of 1 MeV electrons and 1 MeV neutrons on the operation of high speed GaAs Charge Coupled Devices (CCDs) are presented. Radiation-induced trapping levels are characterized using a linear array CCD structure and the periodic pulse technique. 1 MeV electron irradiation introduced traps at 0.1 eV and 0.39 eV with bulk trap introduction rates of 1 cm-1 and 0.33 cm-1, respectively. The devices were irradiated to a maximum fluence of 9×1014 electrons/cm2. 1 MeV neutron irradiation introduced an electron trap level at 0.64 eV with a bulk trap introduction rate of 0.5 cm-1. Catastrophic device failure occurred at neutron fluences of 6×1013 neutrons/cm2. Device charge transfer efficiency was characterized pre- and post-irradiation over the temperature range of 80°K to 300°K. |
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