On the effect of non-degenerate doping of polysilicon gate in thin oxide MOS-devices—Analytical modeling |
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Authors: | Predrag Haba Siegfried Selberherr |
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Affiliation: | Institute for Microelectronics, Technical University Vienna, Gußhausstrasse 27-29, 1040, Vienna, Austria |
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Abstract: | A one-dimensional model of the polysilicon-gate-oxide-bulk structure is presented in order to analyze the implanted gate MOS-devices. The influence of the ionized impurity concentration in the polysilicon-gate near the oxide and the charge at the polysilicon-oxide interface on the flat-band voltage, threshold voltage, inversion layer charge and the quasi-static C–V characteristic is quantitatively studied. The calculations show a considerable degradation of the inversion layer charge due to the voltage drop in the gate, especially in thin oxide devices. The calculated quasi-static C–V curves agree with the recently published data of implanted gate devices. |
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