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| CTR的导电机理研究 | |
| 引用本文： | 孙健 甘朝钦 刘英 吴宗汉. CTR的导电机理研究[J]. 传感技术学报, 2006, 19(2): 454-456 |
| 作者姓名： | 孙健 甘朝钦 刘英 吴宗汉 |
| 作者单位： | 1. 南京师范大学,电气与自动化工程学院,南京,210042 2. 东南大学,物理系,南京,210096 3. 江苏兴顺电子元件厂,江苏,兴化,225700 |
| 基金项目： | 江苏省高校自然科学基金 |
| 摘 要： | 为了优化CTR(Critical Temperature Resister)产品性能,从微观上分析CTR晶粒体相变临界特征和粒界的电势垒,得出CTR临界阻温特性是由晶粒体导电性能和粒界电势垒共同决定,即"晶粒体-粒界"模型.运用此模型对不同配料比样品的临界阻温特性进行分析,得出V2O5:P2Os:Fe2O3配料比是影响CTR性能的关键因素. |
| 关 键 词： | 临界特性 阻温特性 晶粒体 粒界 |
| 文章编号： | 1004-1699（2006）02-0454-03 |
| 收稿时间： | 2005-06-08 |
| 修稿时间： | 2005-06-08 |
The conducting mechanism of V-P-Fe C.T.RS |
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| SUN jian GAN Chao-qing LIU Yin WU Zong-han. The conducting mechanism of V-P-Fe C.T.RS[J]. Journal of Transduction Technology, 2006, 19(2): 454-456 | |
| Authors: | SUN jian GAN Chao-qing LIU Yin WU Zong-han |
| Affiliation: | 1.College of Electric and Automation Engineering, Nanjing Normal University, Nanjing 210042, China;2, Department of Physics, Southeast University, Nanjing 210096, China; 3, Jiangsu Xinshun Electronics Device, Ltd, Xinghua Jiangsu 225700, China |
| Abstract: | In order to enhance the CTR(Critical Temperature Resister) product performance, from micrograph the critical characteristic of phase change of the CTR crystal grain body and the electricity potential barrier between grains were analysed. The CTR critical resistance temperature characteristic is decided together by the crystal grain body electric conductivity and the grain of electricity potential barrier. The model carries on the analysis using "the crystal grain body-grain" to the different ingredient compared to the sample critical resistance temperature characteristic, obtains V_2O_5:P_2O_5:Fe_2O_3 ingredient ratio is affects the CTR performance the key aspect. |
| Keywords: | critical characteristic the characteristic of resistance-temperature crystal-grain grain-boundary. |
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