| Abstract: | A novel positive deep UV resist for KrF excimer laser lithography has been developed. The resist is composed of 1,7-bis(4-chlorosulfonyl phenyl)-4-diazo-3,5-heptanedione as the alkaline dissolution inhibitor and an alkali-soluble sytrene polymer as the main-polymer. 1,7-bis(4-chlorosulfonyl phenyl)-4-diazo-3,5-heptanedione has great capability of alkaline dissolution inhibition. High thermal stability and excellent photobleachability at 248 nm of the compound are also characterized. The alkali-soluble styrene polymer has a high transmittance of 70% in 1.0 μm thickness at 248 nm. The novel positive resist had an excellent property for dissolution kinetics and photobleaching. We achieved high aspect ratio half-micron pattern fabrication in 1.0 μm thickness using the new resist. |
