Etching characteristics of LiNbO3 crystal by fluorine gas plasma reactive ion etching |
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| Affiliation: | 1. Anjos of Assis Veterinary Medicine Centre (CMVAA), Rua Dª. Francisca da Azambuja Nº 9 - 9A, Barreiro, Portugal;2. Faculty of Veterinary Medicine, Department of Clinic, Surgery, University of Lisbon (FMV/ULisboa), Av. da, Universidade Técnica de Lisboa, Polo Universitário Alto da Ajuda, Lisbon, Portugal;3. Centre for Interdisciplinary Research in Animal Health (CIISA), FMV/ULisboa, Av. da, Universidade Técnica de Lisboa, Polo Universitário Alto da Ajuda, Lisbon, Portugal;4. School of Dental Medicine, Superior Institute of Health Sciences Egas Moniz, Caparica, Portugal;1. Academic University, Russian Academy of Sciences, 194021, St. Petersburg, Russia;2. Higher School of Physics and Materials Engineering, Peter the Great St. Petersburg Polytechnic University, 195251, Saint Petersburg, Russia;3. Institute of Mineralogy, Southern-Urals Federal Research Center of Mineralogy and Geoecology, Ural Branch of RAS, Miass 456317, Chelyabinsk Region, Russa;1. Alkek Center for Metagenomics and Microbiome Research, and Department of Molecular Virology and Microbiology, Baylor College of Medicine, Houston, TX 77030, USA;2. Biology of Inflammation Center, Baylor College of Medicine, Houston, TX 77030, USA |
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| Abstract: | The etching characteristics of a LiNbO3 single crystal have been investigated using plasma reactive ion etching (RIE) with a mixture of CF4/Ar/H2. The etching rate of LiNbO3 with the mixture of CF4/Ar/H2 gases was evaluated. The etching surface was evaluated by atomic force microscopy, X-ray diffraction and X-ray photoelectron spectroscopy methods. The rate-determining process of RIE is the supply of F radicals in RIE. The surface morphology of the etched LiNbO3 changed with the increase in the H2 gas flow ratio. The surface profile became flat, on optimizing the etching conditions, similar to the surface of non-etched LiNbO3. The X-ray diffraction peak for etched LiNbO3 using the mixture of CF4 and Ar gases did not appear, because a non-crystalline layer was formed. It was found that the crystallinity of the surface is dependent on both, the flow rate of H2 gas and the etching time. F atoms exist in the contamination layer of the sample etched, using the mixture of CF4, Ar and H2 gases. Optimum etching conditions, considering both the surface flatness and the crystallinity, were determined. |
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