Minority carrier lifetime and metallic-impurity mapping in silicon wafers |
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| Affiliation: | 1. Department of Mathematics, Zhejiang Sci-Tech University, Hangzhou 310018, PR China;2. Francisk Scorina State University, Gomel 246019, Belarus;1. Loughborough University, Loughborough, United Kingdom;2. University of Sierra Leone, Freetown, Sierra Leone;1. Division of Applied Mathematics, Brown University, 182 George St, Providence, RI 02912, USA;2. School of Mathematical Sciences and Fujian Provincial Key Laboratory of Mathematical Modeling and High Performance Scientific Computing, Xiamen University, 361005 Xiamen, China;1. University Witten-Herdecke, Department of Obstetrics and Gynecology, Academic Hospital Cologne Weyertal University of Cologne, Germany;2. Department of Obstetrics and Gynecology, Academic Hospital Cologne Weyertal University of Cologne, Germany;3. Department of Obstetrics and Gynecology, University Witten-Herdecke, Marien-Hospital, Witten Marienplatz, 258452 Witten, Germany;1. College of Materials Science and Technology, Jiangsu Key Laboratory of Materials and Technology for Energy Conversion, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, PR China;2. Department of Physics, Changshu Institute of Technology, Changshu 215500, PR China;3. Suzhou Talesun Technologies Co. Ltd., Changshu 215542, PR China |
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| Abstract: | Inadvertent contaminations of silicon wafers during processing steps are simulated by in-diffusion of gold and iron. Impurity concentration mappings are deduced from lifetime scan maps, with a lateral resolution of 50 μm. Such scan maps are obtained by the contactless phase shift technique, when the sample surfaces are passivated by an acqueous solution of polyvidone. The local value of gold or iron concentration are found to be in agreement with concentrations computed from deep-level transient spectroscopy results determined by means of arrays of small metal–semiconductor diodes. |
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