| Numerical Simulation of Spectral Response for 650 nm Silcon Photodetector |
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| 引用本文： | LIULi-na. Numerical Simulation of Spectral Response for 650 nm Silcon Photodetector[J]. 半导体光子学与技术, 2003, 9(2): 82-88 |
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| 作者姓名： | LIULi-na |
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| 作者单位： | Dept.ofPhy.,XiamenUniversity,Xianmen361005,CHN |
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| 摘 要： | The theoretical Spectral response formula of the N^ -N-I-P^ silicon photodetector with high/low emission junction is given.At the same time,considering the process requirements,the optimun structure parameters of silicon photodetector are obtained by numerical calculation and simulation.Under the condition of these optimum structure parameters,the responsivity of the silicon photodetector will be 0.48A/W at 650 nm.
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| 关 键 词： | 光谱响应 数字模拟 光电探测器 硅 |
| 收稿时间： | 2002-12-09 |
Numerical Simulation of Spectral Response for 650 nm Silicon Photodetector |
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| Abstract: | The theoretical spectral response formula of the N+- N - I - P+silicon photodetector with high/low emission junction is given. At the same time, considering the process requirements, the optimum structure parameters of silicon photodetector are obtained by numerical calculation and simulation. Under the condition of these optimum structure parameters, the responsivity of the silicon photodetector will be 0.48 A/W at 650 nm. |
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| Keywords: | Spectral response Silicon Photodetector |
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