Modeling of the body current in a Bi-MOS hybrid-mode environment

The body current I_B of deep submicron lightly doped drain pMOSFETs has been investigated. Based on the experimental results, an analytical I_B model, applicable for devices operating in a Bi-MOS hybrid-mode environment, has been developed for the first time. The proposed model is able to effectively characterize the measured I_B results over a wide range of independently applied biases (gate, drain and body) and gate lengths (from 1 μm down to 0.25 μm). The possibility of minimizing or even eliminating the undesired I_B is also explored and discussed for the first time.