Development of ferroelectric oxides based resistive switching materials |
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Authors: | Peiyuan Guan Yuandong Sun Tao Wan Xi Lin Zhemi Xu |
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Affiliation: | 1. School of Materials Science and Engineering, University of New South Wales, Sydney, Australia;2. Department of Polymer Science, University of Akron, Akron, OH, USA |
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Abstract: | Resistive random access memory (RRAM) is one of the most promising candidates that satisfies the requirements of new generation non-volatile memories, as a consequence of its high density, outstanding scalability, and low power consumption. The review is based on a summary of recent studies in ferroelectric oxides based resistive switching (RS) materials and devices. It highlights the various ferroelectric oxide materials with RS behaviour and the underlying mechanisms including filament-type and interface-type mechanism. In the end, the challenge in current RRAM for future high-density data storage applications is addressed. |
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Keywords: | Resistive switching ferroelectric oxide non-volatile memory |
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