纳秒级脉冲电源的研制 |
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引用本文: | 聂兆磊,赖磊捷,朱利民,言勇华. 纳秒级脉冲电源的研制[J]. 机电一体化, 2013, 19(3): 55-58,65 |
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作者姓名: | 聂兆磊 赖磊捷 朱利民 言勇华 |
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作者单位: | 上海交通大学机器人研究所,上海,200240 |
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摘 要: | 根据微细电化学加工的工艺特点,采用FPGA和MOSFET设计了双MOSFET的电化学加工纳秒级脉冲电源。该脉冲电源可以提供脉宽和脉问以及占空比可调的纳秒级脉冲,输出脉宽最小可达40ns,提高了加工过程的稳定性和加工极限能力;并利用阳极腐蚀结合湿印章的“电化学湿印章技术”实现了微细电化学加工,获得了较高的分辨率。
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关 键 词: | 脉冲 MOSFET 纳秒 电源 占空比 |
The Design of Nanosecond-class Pulse Power |
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Abstract: | According to the characteristics of micro electrochemical machining process, we design of the dual MOSFET electrochemical processing nanosecond-class pulse power, by using the FPGA and MOSFET. The pulse power can provide pulse with adjustable duty cycle, pulse width and frequency. The nanosecond pulse power can output minimum pulse width of 40 ns, improving the stability of the process and the processing limits of capacity. And we achieve a fine electrochemical processing and obtain a higher resolution by using wet seal technology. |
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Keywords: | pulse MOSFET nanosecond power duty cycle |
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