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测量计算金属-半导体接触电阻率的方法
引用本文:李鸿渐,石瑛. 测量计算金属-半导体接触电阻率的方法[J]. 半导体技术, 2008, 33(2): 155-159
作者姓名:李鸿渐  石瑛
作者单位:武汉大学,物理技术与科学学院,武汉,430072;武汉大学,物理技术与科学学院,武汉,430072
摘    要:如何测量、计算得到精确接触电阻值已凸显重要.介绍了多种测量计算金属-半导体欧姆接触电阻率的模型和方法,如矩形传输线模型、圆点传输线模型、多圆环传输线模型等,对各方法的利弊进行了讨论,并结合最新的研究进展进行了评述和归纳.综合多种因素考虑,认为圆点传输线模型是一种较好的测量金属半导体接触电阻率的方法.

关 键 词:金属-半导体接触  接触电阻率  传输线模型
文章编号:1003-353X(2008)02-0155-05
收稿时间:2007-10-16
修稿时间:2007-10-16

Measurement and Calculation of Specific Contact Resistance in Metal-Semiconductor Contacts
Li Hongjian,Shi Ying. Measurement and Calculation of Specific Contact Resistance in Metal-Semiconductor Contacts[J]. Semiconductor Technology, 2008, 33(2): 155-159
Authors:Li Hongjian  Shi Ying
Affiliation:Li Hongjian,Shi Ying (School of Physics , Technology,Wuhan University,Wuhan 430072,China)
Abstract:How to precisely measure and calculate the contact resistance values becomes an important research project.Various models and methods for the measurement and calculation of special contact resistance in metal-semiconductor contacts were summarized.Both the advantages and disadvantages of the models and methods were discussed,including linear transfer length method,circular transmission line model,multiple annular electrode,etc.Combined with the latest research progress,the operate methods were commented and...
Keywords:metal-semiconductor contact   specific contact resistance   transmission line model
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