Low-temperature polysilicon thin-film transistors fabricated fromlaser-processed sputtered-silicon films

In an effort to develop a simple low-temperature high-performance polysilicon thin-film transistor (TFT) technology, we report a fabrication process featuring laser-crystallized sputtered-silicon films. This top Al-gate coplanar TFT process subjects the substrate to a maximum temperature of 300°C, and produces devices with mobilities up to 450 cm²/Vs, on/off current ratios greater than 10⁷ , without using a post-hydrogenation step. We believe these results represent the highest performance TFT's to date fabricated from sputtered silicon films