3.21 ps ECL gate using InP/InGaAs DHBT technology |
| |
| Authors: | Ishii K Nosaka H Ida M Kurishima K Shibata T |
| |
| Affiliation: | NTT Photonics Labs., NTT Corp., Kanagawa, Japan; |
| |
| Abstract: | A new circuit configuration for an emitter-coupled logic (ECL) gate that can reduce propagation delay time has been demonstrated. Nineteen-stage ring oscillators were fabricated using InP/InGaAs double-heterojunction bipolar transistors (DHBTs) with cutoff frequency f/sub T/ and maximum oscillation frequency f/sub max/ of about 232 and 360 GHz, respectively, to evaluate the speed performance of the proposed ECL gate. The minimum propagation delay is 3.21 ps/gate. The proposed ECL gate is about 8% faster than the conventional ECL gate. |
| |
| Keywords: | |
|
|
