High-performance InP/In0.53Ga0.47As/InPdouble HBTs on GaAs substrates |
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| Authors: | Kim YM Dahlstrom M Lee S Rodwell AJW Gossard AC |
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| Affiliation: | Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA; |
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| Abstract: | InP/In0.53Ga0.47As/InP double heterojunction bipolar transistors (HBTs) were grown on GaAs substrates. A 140 GHz power-gain cutoff frequency fmax and a 207 GHz current-gain cutoff frequency fτ were obtained, presently the highest reported values for metamorphic HBTs. The breakdown voltage BVCEO was 5.5 V, while the dc current gain β was 76. High-thermal-conductivity InP metamorphic buffer layers were employed in order to minimize the device-thermal resistance |
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