Effect of deposition temperature on dielectric properties of PECVD Ta2O5 thin film |
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| Authors: | Hwan Seong Moon Jae Suk Lee Sung Wook Han Jong Wan Park Jae Hak Lee Seung Kee Yang Hyung Ho Park |
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| Affiliation: | (1) Department of Metallurgical Engineering, Hanyang University, San 13 Hangdang-dong, Sungdong-gu, 133-791 Seoul, Korea;(2) Samsung Advanced Institute of Technology, Korea;(3) Electronics and Telecommunications Research Institute, Korea |
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| Abstract: | Tantalum oxide film formation by plasma-enhanced chemical vapour deposition (PECVD) using TaCl5 as a source material was examined. The effects of deposition temperature on the formation, structure and electric properties of the Ta2O5 film were investigated for Al/Ta2O5/ p-Si (MTS) capacitors. The deposition rate and refractive index increased with increasing deposition temperature. It was found that the structure of Ta2O5 deposited by PECVD was amorphous as-deposited. However, crystalline  -Ta2O5 of hexagonal structure was formed by a 700 °C, 1 h heat treatment in argon. Capacitance and relative dielectric constant of the PECVD Ta2O5 were found to be 2.54 fF  m–2 and 23.5, respectively. The PECVD films obtained in this study have higher dielectric constants and remarkably better general film characteristics than those obtained by other deposition methods. |
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