用于聚焦型场发射阵列的Ni-SiO2透明电阻薄膜

为用自对准技术制作聚焦型发射阵列（ＦＦＥＡ）的聚焦极，要求ＦＦＦＡ的电阻层能通过光刻用近紫外光。为此提出用共溅射法制作Ｎｉ－ＳｉＯ２金属陶瓷电阻层。研究结果表明，当适当调整Ｎｉ和ＳｉＯ２成份比例，可得到既能满足方阻要求又不妨碍光刻的电阻层。同时对此电阻层的电镜微观形貌，能谱成分分析，方阻及透光率进行了讨论，最后，给出一个利用此电阻层制作场发射聚焦电极的实例。

Ni-SiO2 Cermet Transpearent Resistive LayersFor Fabrication of Foucusing Field Emission Arrays

A self?aligned lithography has been proposed for the fabrication of the focus grid in focusing field emission arrays.Because of the use of the backward exposure,the lithography requires that the resistive layer of the field emission arrays should be transparent to UV radiation.For this purpose,Ni?SiO 2 cermet resistive layers have been especially constructed by co?sputtering.It has been shown that,by a proper choice of the nickel composition,resistive layers both having the required sheet resistance and enabling the photolithography can be obtained.Then,we present the SEM morphology,the composition measurements ,the DC sheet resistance and the transmittance of the obtained thin films.Finally,an example is given to show the use of the resistive layers in the fabrication of the focus grid.