| 退火温度对硅基溅射铜膜应力的影响 |
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| 引用本文： | 吴桂芳,史守华,何玉平,王磊,陈良,孙兆奇. 退火温度对硅基溅射铜膜应力的影响[J]. 真空科学与技术学报, 2002, 22(2): 139-142 |
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| 作者姓名： | 吴桂芳 史守华 何玉平 王磊 陈良 孙兆奇 |
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| 作者单位： | 安徽大学物理系,合肥,230039;中国科学院固体物理所内耗与固体缺陷开放实验室,合肥,230031 |
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| 基金项目： | 国家自然科学基金 (No .5 9972 0 0 1)，安徽省教育厅科研基金 (No .99JL0 0 2 4)资助课题 |
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| 摘 要： | 采用光学相移法 ,对Si基片上Cu膜应力随退火温度的变化进行了研究。研究表明 :随退火温度的升高 ,Cu膜应力减小 ,2 0 0℃时平均应力减小为 - 0 2 6 1× 10 8Pa,且应力分布均匀 ,在选区范围内应力差仅为 2 2 4 4× 10 8Pa。同时用X射线衍射技术测量分析了Cu膜经过不同退火温度热处理后的微结构组织 ,研究了Cu膜的微结构对其应力的影响
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| 关 键 词： | 溅射Cu膜 退火温度 微结构 应力 光学相移法 |
| 文章编号： | 0253-9748(2002)02-0139-04 |
| 修稿时间： | 2001-07-12 |
Influence of Annealing Temperature on Microstructures and Stress of Sputtered Cu Film on Si Substrate |
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| Wu Guifang,Shi Shouhua,He Yuping,Wang Lei,Chen Liang,Sun Zhaoqi. Influence of Annealing Temperature on Microstructures and Stress of Sputtered Cu Film on Si Substrate[J]. JOurnal of Vacuum Science and Technology, 2002, 22(2): 139-142 |
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| Authors: | Wu Guifang Shi Shouhua He Yuping Wang Lei Chen Liang Sun Zhaoqi |
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| Affiliation: | Wu Guifang,Shi Shouhua,He Yuping,Wang Lei,Chen Liang,Sun Zhaoqi Department of Physics,Anhui University,Hefei,230039,China,Laboratory of Internal Friction and Defects in Solids,Institute of Solid State Physics,Chinese Academy of Sciences,Hefei,230031,Chi |
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| Abstract: | Stress inversely affects the quality of thin films.Copper films,grown on silicon wafer by DC sputtering and annealed at different temperature,were studied with optical phase shift technique and X ray diffraction to understand the variations in microstructures and stress of the film.The results show that the rise of annealing temperature,from 300 K to 473 K,reduces significantly the stress of the Cu film. |
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| Keywords: | Sputtering Cu film Annealing temperature Microstructure Stress Optical phase shift technology |
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