Effect of the ion-beam-induced getters on the parameters of neutron-irradiated GaAs heterostructures

It was found that the negative influence of neutron irradiation on the parameters of Schottky-gate field-effect transistors based on epitaxial GaAs heterostructures can be markedly reduced by preliminarily implanting the heterostructures with Ar ions from the side of a substrate. The effect is explained by the farrange gettering of impurities and defects from the active transistor regions in the course of the neutron irradiation, which suppresses the formation of irradiation-induced deep energy levels.