Modeling of SiO2 CVD from TEOS/ozone in a separate-gas-injection reactor |
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| Authors: | Eui Jung Kim William N Gill |
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| Affiliation: | (1) Department of Chemical Engineering, University of Ulsan, San 29, Moogeodong, Namku, 680-749 Ulsan, Korea;(2) Department of Chemical Engineering, Rensselaer Polytechnic Institute, 12180-3590 Troy, New York, USA |
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| Abstract: | A mathematical model has been developed to study the chemical vapor deposition of SiO2 from TEOS and ozone in a cold-wall separate-gas-injection reactor related to the commercial Watkins-Johnson 7000. The model
employs the kinetic scheme proposed previously by Kim and Gill. Control-volume-based finite difference methods are used to
solve for the two-dimensional fluid velocity, temperature, and concentration distributions. The model successfully describes
experimental data of film thickness profiles available. We systematically investigate the dependence of deposition rate on
operating conditions including O3/TEOS ratio, reactant flow rate, and injector-wafer spacing. The predicted results indicate that a high TEOS flow rate and
an O3/TEOS ratio of around 30 are preferable for obtaining high deposition rates and good film quality. |
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| Keywords: | CVD SiO2 Film TEOS/Ozone Process Separate Gas-Injection |
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