| 光MOS固体继电器抗电离辐射研究 |
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| 引用本文： | 李祖安,郭艳春,陈春霞,龙平,张佳宁,徐道润,张雷,陈倩.光MOS固体继电器抗电离辐射研究[J].半导体光电,2012,33(4):470-473. |
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| 作者姓名： | 李祖安 郭艳春 陈春霞 龙平 张佳宁 徐道润 张雷 陈倩 |
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| 作者单位： | 重庆光电技术研究所,重庆,400060;四川压电与声光研究所,重庆,400060 |
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| 摘 要： | 分析了光MOS固体继电器在电离辐照条件下的失效模式,并针对组成器件的不同元器件提出了抗辐射的设计方案。采取了包括优化材料、合理设计器件结层厚度、选用抗辐射能力强的钝化膜等工艺技术制作样品,并通过试验对比确认了抗辐射方案的有效性,结果表明,器件抗辐照能力大于30krad（Si）,能够满足对星用光MOS固体继电器抗辐射能力的要求。
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| 关 键 词： | 光MOS固体继电器 电离辐射 失效模式 抗辐射加固 |
Research on Anti-ionizing Radiation of the Photo MOSFET Relay |
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| LI Zu’an,GUO Yanchun,CHEN ChunXia,LONG Ping,ZHANG JiaNing,XU Daorun,ZHANG Lei,CHEN Qian.Research on Anti-ionizing Radiation of the Photo MOSFET Relay[J].Semiconductor Optoelectronics,2012,33(4):470-473. |
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| Authors: | LI Zu’an GUO Yanchun CHEN ChunXia LONG Ping ZHANG JiaNing XU Daorun ZHANG Lei CHEN Qian |
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| Affiliation: | 1.Chongqing Optoelectronics Research Institute,Chongqing 400060,CHN; 2.Sichuan Institute of Piezoelectric and Acoustooptic Technology,Chongqing 400060,CHN) |
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| Abstract: | The failure modes of photo MOSFET relay under the effect of ionizing radiation were studied.Anti-radiation designs for different components were proposed including material optimization,junction design and application of anti-radiation dielectric films.Then photo MOSFETs samples were irradiated using a Co60 source and the anti-radiation ability was improved to be higher than 30 krad(si).The results indicated that the anti-radiation designs for photo MOSFET are effective and can satisfy the requirement of anti-radiation for photo MOSFETs. |
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| Keywords: | photo MOSFET relay ionization radiations failure modes anti-radiant design |
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