| In2Ge2O7薄膜制备及其紫外光敏特性研究 |
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| 引用本文： | 冯琳,褚夫同,唐永旭,李瑶,刘兴钊.In2Ge2O7薄膜制备及其紫外光敏特性研究[J].半导体光电,2012,33(2):204-206. |
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| 作者姓名： | 冯琳 褚夫同 唐永旭 李瑶 刘兴钊 |
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| 作者单位： | 电子科技大学电子薄膜与集成器件国家重点实验室,成都,610054;电子科技大学电子薄膜与集成器件国家重点实验室,成都,610054;电子科技大学电子薄膜与集成器件国家重点实验室,成都,610054;电子科技大学电子薄膜与集成器件国家重点实验室,成都,610054;电子科技大学电子薄膜与集成器件国家重点实验室,成都,610054 |
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| 摘 要： | 以In2O3和GeO2为原料,采用碳还原法制备了In2Ge2O7多晶薄膜,利用XRD和SEM对薄膜的结构和形貌进行了表征。对基于In2Ge2O7薄膜的金属-半导体-金属(MSM)紫外探测器进行了紫外光电导特性测量,结果显示:在波长为250nm的紫外光照射下,在5V偏压下,器件的光电流为727μA(暗电流为12μA),光响应度达到262.9A.W-1,光响应上升时间约为67s,下降时间约为15s。分析认为较长的响应时间是由于内部的缺陷与位错造成的。初步研究结果表明:In2Ge2O7薄膜可以作为一种良好的日盲紫外探测材料。
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| 关 键 词： | In2Ge2O7薄膜 碳还原法 紫外探测器 |
Preparation and Ultraviolet Photoresponse of In2Ge2O7 Thin Films |
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| Affiliation: | FENG Lin,CHU Futong,TANG Yongxu,LI Yao,LIU Xinzhao(State Key Laboratory of Electronic Thin Film and Integrated Devices,University of Electronic Science and Technology of China,Chengdu 610054,CHN) |
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| Abstract: | In2Ge2O7 thin film was prepared by carbothermal reduction method using In2O3 and GeO2 as raw materials.The properties were characterized by XRD,SEM.The characteristics of the In2Ge2O7 thin film based metal-semiconductor-metal(MSM) photodetectors show that the photo current was 727 μA and the dark current was 12 μA),and a high responsivity of 262.9 A·W-1 was achieved under 5 V bias when it was irradiated by the ultraviolet light(λ=250 nm).The device show a slow time response with a rise time of 67 s and a decay time of 15 s.The authors deduced the slow time response was caused by the defect traps in the film.The preliminary results show that the In2Ge2O7 thin film is a promising candidate for the solar-blind photodetectors. |
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| Keywords: | In2Ge2O7 thin film carbothermal reduction method ultraviolet photodetector |
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