| 电阻法测试超薄膜厚度的研究 |
| |
| 引用本文： | 万晓枫,刘爽,何存玉.电阻法测试超薄膜厚度的研究[J].半导体光电,2012,33(4):537-539. |
| |
| 作者姓名： | 万晓枫 刘爽 何存玉 |
| |
| 作者单位： | 电子科技大学 计算机科学与工程学院;光电信息学院,成都,610054;成都言佰科技有限公司,成都,610031 |
| |
| 基金项目： | 国家自然科学基金项目，四川省科技支撑项目，四川省应用基础研究项目 |
| |
| 摘 要： | 常规方法测试超薄膜的厚度存在很大困难。介绍一种测试约4nm PtSi厚度的电阻率法。先制备厚度约40nm的薄膜,测试出薄膜电阻率,再考虑超薄膜的表面效应、尺寸效应,推导出超薄膜电阻率与薄膜电阻率的关系式,测试超薄膜方电阻,计算出超薄膜厚度。给出了TEM晶格像验证结果,误差小于6%。实验表明该方法简单易行,对其他超薄膜厚度的测试提供了参考。
|
| 关 键 词： | 超薄PtSi膜 厚度测试 尺寸效应 TEM晶格像 |
Thickness Study of Ultra-thin Film by Resistance Test |
| |
| WAN Xiaofeng,LIU Shuang,HE Cunyu.Thickness Study of Ultra-thin Film by Resistance Test[J].Semiconductor Optoelectronics,2012,33(4):537-539. |
| |
| Authors: | WAN Xiaofeng LIU Shuang HE Cunyu |
| |
| Affiliation: | 1.School of Computer Science and Engineering;2.School of Optoelectronic Information,University of Electronic Science and Technology of China,Chengdu 610054,CHN;3.Chengdu Yanbai Technology Co.,Ltd.,Chengdu 610031,CHN) |
| |
| Abstract: | It is very difficult to test the thickness of ultra-thin films by conventional methods,so a method based on resistance test to determine the thickness of ~ 4 nm PtSi ultra-thin film is introduced.Firstly,the film with the thickness of ~ 40 nm was prepared,and then its resistivity was tested.The relationship between the film resistivity and ultra-thin film resistivity was deduced based on analyzing surface effect and size effect of ultra-thin film.And the quartet resistivity and thickness were tested and calculated,respectively.Finally the results of TEM lattice image of the ultra-thin sample were given with an error rate of less than 6%.It shows that the method is convenient and can be used to determine the thickness of other ultra-thin film. |
| |
| Keywords: | ultra-thin PtSi film thickness test size effect TEM crystal lattice images |
| 本文献已被 CNKI 万方数据 等数据库收录！ |
|
